name: Zhen Fan (樊贞)
gender: Male
nationality: People's Republic of China
birthday: June 28, 1989
birth place: Qianjiang, Chongqing (重庆市黔江区)
address: Science Building #5, South China Normal University, Guangzhou Higher Education Mega Center, Waihuanxi Road No.378, Guangzhou 510006, China
广州大学城华南师范大学理5栋,510006
phone: +86-20-3931 3395
fax: +86-20-3931 3596
email: fanzhen@m.scnu.edu.cn
website: http://www.researchgate.net/profile/Zhen_Fan3

education experience:

  • 2011年-2015年:博士研究生教育: 新加坡国立大学;专业: 材料科学与工程;工学博士学位
  • 2007年-2011年:大学本科教育: 上海交通大学;专业: 材料科学与工程;工学学士学位

job experience:

  • 2016年-现在:华南师范大学华南先进光电子研究院 副研究员
  • 2015年-2016年:新加坡国立大学 博士后
  • 2015年05月-2015年11月:美国加州大学伯克利分校 访问学者

research interests:

  • 铁电材料的结构设计,以及结构与电极化、介电、压电等性能之间的相互关联
  • 铁电薄膜中的电输运、光电转换等现象

research projects:

  • 国家自然科学基金青年科学基金项目“新型钙钛矿型铁电体/莫特绝缘体异质结光伏结构的性能和机制研究” (51602110), 2017-2020, 20万, 主持人
  • 国家科技部纳米科技重点专项“纳米尺度多场物性与输运性质测量及调控” (2016YFA0201002), 2016-2021, 120万 (子课题之一), 主要骨干成员

professional activities:

  • Zhen Fan,International Union of Materials Research Societies, International Conference on Electronic Materials (IUMRS-ICEM2016), 2016.07,Singapore,session chair.

course teaching:

  • 《材料物理与化学》 研究生课程

publications:

  1. Z. Fan*, H. Fan, Z. Lu, P. Li, Z. Huang, G. Tian, L. Yang, J. Yao, C. Chen, D. Chen, Z. Yan, X. Lu, X. Gao*, and J.-M. Liu, Ferroelectric diodes with charge injection and trapping, Phys. Rev. Appl., accepted (2016).
  2. J. Wu*, Z. Fan*. D. Xiao, J. Zhu, and J. Wang*, Multiferroic bismuth ferrite-based materials for multifunctional applications: ceramic bulks, thin films and nanostructures, Prog. Mater. Sci. 84, 335-402 (2016).
  3. Z. Fan*, J. Xiao, J. Wang, L. Zhang, J. Deng, Z. Liu, Z. Dong, J. Wang, and J. Chen*, Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films, Appl. Phys. Lett. 108, 232905 (2016).
  4. Z. Fan*, J. Deng, J. Wang, Z. Liu, P. Yang, J. Xiao, X. Yan, Z. Dong, J. Wang, and J. Chen*, Ferroelectricity emerging in strained (111)-textured ZrO2 thin films, Appl. Phys. Lett. 108, 012906 (2016).
  5. Z. Fan, K. Sun, and J. Wang*, Perovskties for photovoltaics: a combined review of organic-inorganic halide perovskites and ferroelectric oxide perovskites, J. Mater. Chem. A 3, 18809-18828 (2015).
  6. Z. Fan, J. Xiao, K. Sun, L. Chen, Y. Hu, J. Ouyang, K. P. Ong, K. Zeng, and J. Wang*, Ferroelectricity in CH3NH3PbI3 perovskite. J. Phys. Chem. Lett. 6, 1155-1161 (2015). Hot paper highlighted by Web of Science.
  7. Z. Fan, J. Xiao, K. Yao*, K. Zeng, and J. Wang*, Ferroelectric polarization relaxation in Au/Cu2O/ZnO/BiFeO3/Pt heterostructure, Appl. Phys. Lett. 106, 102902 (2015).
  8. Z. Fan, W. Ji, T. Li, J. Xiao, P. Yang, K. P. Ong, K. Zeng, K. Yao*, and J. Wang*, Enhanced photovoltaic effects and switchable conduction behavior in BiFe0.6Sc0.4O3 thin films, Acta Materialia 88, 83-90 (2015).
  9. Z. Fan, J. Xiao, H. Liu, P. Yang, Q. Ke, W. Ji, K. Yao*, K. P. Ong, K. Zeng, and J. Wang*, Stable ferroelectric perovskite structure with giant axial ratio and polarization in epitaxial BiFe0.6Ga0.4O3 thin films, ACS Appl. Mater. Interfaces 7, 2648-2653 (2015).
  10. Z. Fan, K. Yao*, and J. Wang*, Photovoltaic effect in an ITO/ZnO/BiFeO3/Pt heterostructure, Appl. Phys. Lett. 105, 162903 (2014).
  11. Z. Fan, J. Wang, M. B. Sullivan, A. Huan, D. J. Singh, and K. P. Ong*, Structural instability of BiFeO3 (001) thin films under tensile strain, Sicentific Reports 4, 4631 (2014).