name: Zhibo YAN (颜志波)
gender: Male
nationality: People's Republic of China
birthday: Feb. 08, 1980
birth place: Yongchun, Fujian (福建省永春县)
address: Hankou Road No.22, Nanjing 210093, China
南京市鼓楼区汉口路22号, 210093
phone: 13770701603
fax: None
email: zbyan@nju.edu.cn
website: http://pld.nju.edu.cn

education experience:

  • 2006.09-2011.05: Ph.D. Candidate in Condensed Matter Physics, School of Physics, Nanjing University, China.
  • 1998.09-2002.07: B.S. Student in Applied Physics, Department of Applied Physics, Fuzhou University, China.

job experience:

  • 2014.07-present: Associate Professor of Physics, Master's Supervisor, School of Physics, Nanjing University, China.
  • 2011.06-2014.05: Postdoctoral Fellow, School of Physics, Nanjing University, China.
  • 2013.10-2014.03: Research Associate, Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong, China.
  • 2002.08-2006.07: Teaching Assistant, Department of Physics, Minnan Normal University, China.

research interests:

  • My research interests mainly focus on perovskite-based solar cells, multiferroics, and memristors.

research porjects:

  • National Natural Science Foundation of China (Grant No. 51301084), “The study of resistance switching stability and mechanisms based on metal/oxide heterostructure”, from Jan. 2014 to Dec. 2016.
  • Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130576), “The stability study of the resistive switching in metal/oxide heterojunction”, from Jul. 2014 to Jun. 2016.
  • National Key Research Programme of China (Grant Nos. 2016YFA0300101, 2016YFA0201004), Participant, 2016-2021.

professinal activities:

  • Poster Presentation at The APS March Meeting, Mar. 2-6, 2015, San Antonio, Texas, USA.
  • Invited Presentation: Resistive switching based on strongly correlated transition-metal oxides, IUMRS-ICYRAM, Oct. 28-31, 2014, Haikou, China.
  • Oral Presentation: Unipolar resistive switching mechanisms in manganites YMn1-δO3 and La0.225Pr0.4Ca0.375MnO3, Advances in Nonvolatile Memory Materials and Device Conference, July 11-16, 2010, Suzhou, China.

course teaching:

  • Undergraduate Course: Thermodynamics and Statistical Physics.

publications:

  1. Z. B. Yan*, H. M. Yau, Z. W. Li, X. S. Gao, J. Y. Dai, and J.-M. Liu*, Appl. Phys. Lett. 109, 053506 (2016).
  2. Z. B. Yan and J. M. Liu, Resistance switching memory in perovskite oxides, Annals of Physics 358, 206 (2015).
  3. Z.-Q. Wang, Z. B. Yan*, M.-H. Qin, X.-S. Gao, and J.-M. Liu*, Dynamic resistive switching in a three-terminal device based on phase separated manganites, Chin. Phys. B 24, 037101 (2015).
  4. P. H. Che, Z. B. Yan*, M. F. Liu, Y. L. Wang, X. H. Zhou, and J. M. Liu*, Abnormal colossal electroresistance in Ru-doped La0.225Pr0.4Ca0.375MnO3, J. Appl. Phys. 117, 17C722 (2015).
  5. Y. B. Lin, Z. B. Yan*, X.B. Lu, Z.X. Lu, M. Zeng, Y. Chen, X.S. Gao, J.G. Wan, J.Y. Dai, J. M. Liu*, Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3 junctions, Appl. Phys. Lett. 104, 143503 (2014).
  6. X. Li, C. L. Lu, J. Y. Dai, S. A. Dong, Y. Chen, N. Hu, G. H. Wu, M. F. Liu, Z. B. Yan, and J. M. Liu*, Novel multiferroicity in GdMnO3 thin films with self-assembled nano-twinned domains, Sci. Rep. 4, 7019 (2014).
  7. Z. B. Yan*, J.M. Liu, Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures, Sci. Rep. 3, 2482 (2013).
  8. Z. B. Yan*, X. C. Zhu, M. Liu, X. M. Jiang, X. F. Jiang, J. -M. Liu, Repetitive switching behaviour of a memristor for passive crossbar applications, J. Phys. D: Appl. Phys. 45, 505107 (2012).
  9. Z. B. Yan, Y. Y. Guo, G. Q. Zhang, and J. -M. Liu*, High-performance programmable memory devices based on Co-doped BaTiO3, Adv. Mater. 23, 1351 (2011).
  10. Z. B. Yan and J. M. Liu*, Anomalous phase separation in La0.225Pr0.4Ca0.375MnO3: consequence of temperature and magnetic-field cycles, Applied Physics A 104, 471 (2011).
  11. G. Q. Zhang, S. Dong, Z. B. Yan, Y. Y. Guo, Q. F. Zhang, S. Yunoki, E. Dagotto, and J. M. Liu, Multiferroic properties of CaMn7O12, Phys. Rev. B 84, 174413 (2011).
  12. N. Zhang, Y. Y. Guo, L. Lin, S. Dong, Z. B. Yan, X. G. Li, and J. M. Liu, Ho substitution suppresses collinear Dy spin order and enhances polarization in DyMnO3, Appl. Phys. Lett. 99, 102509 (2011).
  13. Z. B. Yan, S. Z. Li, K. F. Wang, and J. -M. Liu*, Unipolar resistive switching effect in YMn1-δO3 thin films, Appl. Phys. Lett. 96, 012103 (2010).
  14. Z. B. Yan, K. F. Wang, S. Z. Li, S. J. Luo, and J. -M. Liu*, Reversible resistance switching in La0.225Pr0.4Ca0.375MnO3: The Joule-heat-assisted phase transition, Appl. Phys. Lett. 95, 143502 (2009).
  15. Z. B. Yan, S. Dong, K.F. Wang, C.L. Lu, H.X. Guo, J.-M. Liu*, Electric current-induced relaxations of conductivity in phase-separated La0.5Ca0.5Mn0.95Fe0.05O3, J. Appl. Phys. 104, 013916 (2008).