name: Guoliang Yuan (袁国亮)
gender: Male
nationality: People's Republic of China
birthday: August 13, 1975
birth place: Luzhou, Sichuan (四川省泸州市)
address: Xiaolingwei No. 200, Qinghuai district, Nanjing 210046, China
南京市秦淮区孝陵卫200号,210046
phone: +86-25-85792942
fax: +86-25-85792942
email: yuanguoliang@njust.edu.cn
website: www.pld-njust-edu.com

education experience:

  • 2002年-2004年:博士,南京大学,物理系,凝聚态物理专业,理学博士学位 (导师: 刘俊明教授,刘治国教授)
  • 1999年-2001年:硕士,南京大学,材料科学与工程系,材料物理专业,工学硕士学位 (导师: 刘治国教授, 刘俊明教授)
  • 1995年-1999年:本科,南京大学,材料科学与工程系,材料物理专业,工学学士学位 (导师:陆延青教授)

job experience:

  • 2009.10-至今:南京理工大学,材料科学与工程学院,教授
  • 2007.9-2009.9:日本筑波大学,日本学术振兴会(JSPS)特别研究员
  • 2006.11-20079:德国波恩大学,洪堡学者 (联系教授:Manfred Fiebig)
  • 2016.5-2016.10:香港理工大学应用物理系,博士后
  • 2005.12-2006.3, 法国里尔CNRS国家实验室,博士后
  • 2003.12-2004.11:香港理工大学应用物理系,研究助理

research interests:

  • 钙钛矿氧化物多铁性材料和原型器件,比如BiFeO3陶瓷和薄膜
  • 钙钛矿氧化物铁电、压电材料与原型器件,比如铁电畴和柔性铁电存储器
  • 有机和大分子铁电、多铁材料
  • PZT压电制动器

research projects:

  • 国家自然科学基金面上项目“通过晶格严重畸变和电畴精细调控探索BiFeO3等材料的多铁和半导体性能”,批准号51472118,起止日期2015.1-2018.12,负责人
  • 国家自然科学基金重点项目“铁电极化调控铁电薄膜电子稳态输运过程的研究”,批准号11134004,起止日期 2012.1-2016.12,主要骨干成员(刘治国、袁国亮、朱信华、崔崇)
  • 国家自然科学基金面上项目“对铁电极化和半导体性能相互耦合的材料-铁电半导体的研究”,批准号 51072081,起止日期2011.01-2013.12,负责人

professional activities:

  • 2016全国电介质物理、材料与应用学术会议,2016.7,包头,邀请报告.

course teaching:

  • Semiconductor Materials and devices (半导体材料与器件)
  • Fundamentals of Materials Physics (材料物理基础)

student supervion:

  • Wenxiu Gao(高文秀),Program: PhD,Field: flexible ferroelectric devices
  • Xijun XU(徐希军),Program: PhD,Field: piezoelectric ceramics
  • He Ma(马赫),Program: PhD,Field: ferroelectric polarization and domains
  • Yuxi Yang(杨玉玺),Program: PhD,Field: flexible resistive memory
  • Ahmad Hussain,Program: PhD,Field: piezoelectric ceramics
  • Muhammad Adnan Qaiser,Program: PhD,Field: piezoelectric ceramics
  • Zhongshuai Xie(谢忠帅),Program: PhD,flexible ferroelectric devices

publications:

  1. Liufang Chen, Zhihao Cheng, Wenting Xu, Xiangjian Meng, Guoliang Yuan*, Junming Liu and Zhiguo Liu, Electrical and mechanical switchingof ferroelectric polarization in the 70 nm BiFeO3 film, Scientific reports 6, 19092 (2016).
  2. H. Ma, W. X. Gao, J. L. Wang, Tom Wu, G. L. Yuan*, J. M. Liu, Z. G. Liu, Ferroelectric polarization switching dynamics and domain growth of triglycine sulfate and imidazolium perchlorate, Advanced Electronic Materials 2, 1600038 (2016).
  3. Wenting Xu, Jiao Sun, Xijun Xu, Guoliang Yuan*, Yongjun Zhang, Junming Liu, and Zhiguo Liu*, Reproducible resistive switching in the super-thin Bi2FeCrO6 epitaxial film with SrRuO3 bottom electrode, Applied Physics Letters 109, 152903 (2016).
  4. B. B. Xu, Z. P.Luo, Andrew J. Wilson, K. Chen, W. X. Gao, G. L. Yuan, Harsh Deep Chopra, X. Chen, Katherine A. Willets, Zbigniew Dauter, S. Q. Ren*, Multifunctional Charge-Transfer Single Crystals through Supramolecular Assembly, Advanced Materials 28, 5322 (2016).
  5. Y. Zhou, L. You*, S. W. Wang, Z. L. Ku, H. J. Fan, Schmidt Daniel,Rusydi Andrivo, L. Chang, L. Wang, P. Ren, L. F. Chen, G. L. Yuan, L. Chen, J. L. Wang*, Giant photostriction in organic-inorganic lead halide perovskites, Nature Communications 7, 11193 (2016).
  6. W. X. Gao, L. Chang, H. Ma, L. You, J. Yin, J. M. Liu, Z. G. Liu, J. L. Wang, G. L. Yuan*, Flexible organic ferroelectric films with a large piezoelectric response, NPG Asia Materials 7, e189 (2015).
  7. X. J. Xu, G. L. Yuan*, B. Xu, J. Yin, J. M. Liu, Z. G. Liu, Influence of the strain on dielectric and ferroelectric properties of 0.5BaZr0.2Ti0.8O3- 0.5Ba0.7Ca0.3TiO3, Journal of the American Ceramic Society 98, 2823 (2015).
  8. W. Qin, M. G. Gong, X. M. Chen, Tejas A. Shastry, Ridwan Sakidja, G. L. Yuan, Mark C. Hersam, Manfred Wuttig, S. Q. Ren*, Multiferroicity of carbon-based charge-transfer magnets, Advanced Materials 27, 734 (2015).
  9. B. B. Xu, H. S. Li, Asha Hall, W. X. Gao, M. G. Gao, G. L. Yuan, Jeffrey Grossman, S. Q. Ren*, All-polymeric control of nanoferronics, Science Advances 1, 1501264 (2015).
  10. W. Qin, X. M. Chen, H. S. Li, M. G. Gong, G. L. Yuan, Grossman Jeffrey C, Wuttig Manfred, S. Q. Ren*, Room temperature multiferroicity of charge transfer crystals, ACS Nano 9, 9373 (2015).
  11. W. Zhang, M. M. Yang, X. Liang, H. W. Zheng*, Y. Wang, W. X. Gao, G. L. Yuan, W. F. Zhang,X. G. Li,H. S. Luo,R. K. Zheng*, Piezostrain- enhanced photovoltaic effects in BiFeO3/La0.7Sr0.3MnO3/ PMN–PT heterostructures, Nano Energy 18, 315 (2015).
  12. Y. Zhang,Y. M. Liu,H. Y. Ye,D. W. Fu,W. X. Gao,H. Ma,Z. G. Liu,Y. Y. Liu,W. Zhang,J. Y. Li, G. L. Yuan*, R. G. Xiong*, A molecular ferroelectric thin flm of imidazolium perchlorate that shows superior electromechanical coupling, Angewandte Chemie International Edition, 53, 5064-5068 (2014). Highlight by: Lead-Free Film, Science 344, 237, (2014).
  13. Y. Zhou, X. Zuo, L. You, R. Guo, Lim, Zhi Shiuh, L. chen, G. L. Yuan*, J. L. Wang*, Mechanism of polarization fatigue in BiFeO3: The role of Schottky barrier, Applied Physics Letters 104,012903 (2014).
  14. Y. Zhang, H. Y. Ye, H. L. Cai, D. W. Fu, Q. Ye, W. Zhang, Q. H. Zhou,J.L. Wang, G. L. Yuan, R. G. Xiong*, Switchable dielectric, piezoelectric, and second-harmonic generation bistability in a new improper ferroelectric above room temperature, Advanced Materials 26, 4515 (2014).
  15. G. L. Yuan*, J. P. Chen, H. Xia, J. M. Liu, J. Yin, Z. G. Liu, Ferroelectric domain evolution with temperature in BaTiO3 film on (001) SrTiO3 substrate, Applied Physics Letters 103, 062903 (2013).
  16. Xiaomin Chen, Yuhong Zou, Guoliang Yuan*, Min Zeng, J. M. Liu, Jiang Yin, Zhiguo Liu, Temperature gradient introduced ferroelectric self- poling in BiFeO3 ceramics, Journal of the American Ceramic Society 96, 3788 (2013).
  17. S. T. Zhang*, G. L. Yuan*, J. Chen,Z. B. Gu,B. Yang,J. Yin,W. W. Cao, Structural evolving sequence and porous Ba6Zr2Nb8O30 ferroelectric ceramics with ultrahigh breakdown field and zero strain, Journal of the American Ceramic Society 95, 555 (2013).

patents:

  • 袁国亮,刘俊明,王一平,刘治国,一种磁电耦合陶瓷材料及其制备方法,中国发明专利,专利号 No.200410064900.9
  • 陈孝敏,刘璐,袁国亮,一种单向铁电薄膜、制备方法及有效电阻调控方式,中国发明专利,专利号 201010559251.5
  • 骆溁,陈江鹏,马赫,袁国亮,刘治国,一种掺杂铁酸铋半导体薄膜材料及其制备方法,中国发明专利,专利号 201310223929.6
  • 袁国亮,马赫,常磊,高文秀,一种铁电薄膜及其溶液浸泡生长方法,专利号 No.201310671979.0
  • 袁国亮,徐锋,杜宇雷,陈光,在微米级颗粒上通过磁控溅射镀易氧化薄膜的方法,专利号 No.201010557401.9